DMG3401LSN new product 30v p-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d t a = 25c -30v 50m @ v gs = -10v -3.7a 60m @ v gs = -4.5v -3.3a 85m @ v gs = -2.5v -2.7a description this new generation small-signal enhancement mode mosfet features low on-resistance and fast switching, making it ideal for high efficiency power management applications. applications ? motor control ? backlighting ? dc-dc converters ? power management functions features ? low input capacitance ? low on-resistance ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material: molded plastic ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 4) part number case packaging DMG3401LSN-7 sc59 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. ? 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm br omine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view e q uivalent circuit to p view d g s g34 = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) source gate drain sc59 g34 ym product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com free datasheet http:///
5.short duration pulse test used to minimize self-heating effect. DMG3401LSN new product maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 12 v continuous drain current (note 5) v gs = -10v steady state t a = +25c t a = +70c i d -3.0 -2.3 a continuous drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -3.7 -2.9 a pulsed drain current (10s pulse, duty cycle = 1%) i dm -30 a maximum body diode continuous current (note 6) i s -1.5 a thermal characteristics characteristic symbol value units total power dissipation (note 5) p d 0.8 w (note 6) 1.2 thermal resistance, junction to ambient (note 5) r ja 159 c/w (note 6) 105 thermal resistance, junction to case (note 6) r jc 36 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1.0 a v ds =-30v, v gs = 0v gate-body leakage i gss - - 100 na v gs = 1 2v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 -1.0 -1.3 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 41 50 m v gs = -10v, i d = -4a - 47 60 v gs = -4.5v, i d = -3.5a - 60 85 v gs = -2.5v, i d = -2.5a forward transfer admittance |y fs | - 12 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.8 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 8) input capacitance c iss - 1326 - pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss - 103 - reverse transfer capacitance c rss - 71 - gate resistance r g - 7.3 - v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g - 11.6 - nc v dd = -15v, i d = -4a total gate charge (v gs = -10v) q g - 25.1 - gate-source charge q g s - 2 - gate-drain charge q g d - 1.7 - turn-on delay time t d ( on ) - 8 - ns v ds = -15v, v gs = -10v, r gen = 6 ? , r l = 3.75 ? turn-on rise time t r - 13 - turn-off delay time t d ( off ) - 71 - turn-off fall time t f - 38 - notes: 3. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 4. device mounted on fr-4 substrate pc board, 2o z copper, with 1inch square copper pad layout 6. guaranteed by design. not subject to production testing product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com free datasheet http:///
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